P. DANIEL DAPKUS

William M. Keck Professor of Engineering
Director, National Center for Integrated Photonic Technology (NCIPT)
Director, Center for Photonic Technology
University of Southern California, Los Angeles, CA

Education

BS with Honors in Engineering Physics, University of Illinois 1966
MS in Physics, University of Illinois 1967
PhD in Physics, University of Illinois 1970

Professional Background

Co-Principal Investigator(1989 -1992), National Center for Integrated Photonic Technology (NCIPT)
Co-Founder and Director(1986-89), Center for Photonic Technology, University of Southern California
Professor, University of Southern California, Los Angeles, CA; 1982- present
Manager, Microelectronics R&D Center, Rockwell International, Thousand Oaks, CA; 1979-1982
Supervisor, Electronics Research Center, Rockwell International, Anaheim, CA; 1976-1979
Member of Technical Staff, Bell Laboratories, Murray Hill, NJ ; 1970-1976

Professional Recognition and Associations

IEEE LEOS Engineering Achievement Award, 1995
IEEE Leos Distinguished Lecturer 1993-1994
Fellow of the Institute of Electrical and Electronics Engineers
Fellow of The Optical Society of America
Lockheed Senior Research Award, University of Southern California, 1992
National Science Foundation Fellowship 1967-1970
University of Illinois Fellowship 1966-1967
Sigma Xi
Tau Beta Pi

Relevent Recent Publications

J.S. Osinski, K.M. Dzurko, S.G. Hummel and P.D. Dapkus, "Optimization of Stripe Width for Low-Threshold Operation of Quantum Well Laser Diodes", Appl. Phys. Lett. 56, 2487, (1990).

J. S. Osinski, P. Grodzinski, Y. Zou, and P. D. Dapkus, "Evidence of gain enhancement in long wavelength strained quantum well laser diodes," Elect. Lett. 27, 469 (1991).

P. Grodzinski, Y. Zou, J.S. Osinski, and P.D. Dapkus, "Investigation of InxGa1-xAs/GaAs Strained Quantum Well Structures Grown on Non-Planar Substrates by MOCVD," J. Crystal Growth. 107, 583 (1991).

P. Grodzinski, J. S. Osinski, A. Mathur, Yao Zou and P. D. Dapkus, "Growth of InP Related Compounds on Structured Substrates for the Fabrication of Narrow Stripe Lasers," J. Crystal Growth 124, 507(1992).

Atul Mathur, Piotr Grodzinski, Julian S. Osinski, and P. Daniel Dapkus, "Low threshold 1.3 µm strained and lattice-matched quantum well laser," J. Crystal Growth 124, 730 (1992).

Atul Mathur and P. Daniel Dapkus, "Polarization insensitive strained quantum well gain medium for lasers and optical amplifiers" Appl. Phys. Lett. 61, 2845, (1992).

Y. Zou, J. S. Osinski , P. Grodzinski, P.D. Dapkus, W. Rideout, W. F. Sharfin, and F. D. Crawford, "Experimental Verification of the Strain Effects in 1.5 µm Semiconductor Quantum Well Lasers" IEEE Photonics Tech. Lett. 4, 1315 (1992).

J. S. Osinski, Y. Zou, P. Grodzinski, P. D. Dapkus, Z. Karim and A. R. Tangury, Jr., "Low threshold current 1.5 µm buried heterostructure lasers using strained quaternery quantum wells," IEEE Photonics Tech. Lett. 4, 1313 (1992).

Y. Zou, J. S. Osinski , P. Grodzinski, P.D. Dapkus, W. Rideout, W. F. Sharfin, and F. D. Crawford, "The Effect of the Auger Recombination an Differential Gain on the Temperature Sensitivity of 1.5 µm Semiconductr Quantum Well Lasers," Appl. Phys. Lett. 62, 175 (1993).

Vijay Jayaraman, Atul Mathur, Larry A. Coldren and P. Daniel Dapkus, "Extended tuning range in sampled grating DBR lasers" to be published in Photonics Tech. Lett.

Y. Zou, J. S. Osinski, P. Grodzinski, P. D. Dapkus, W. Rideout, W. F. Sharfin, and F. D. Crawford, "Experimental Study of Auger Recombination, Gain and Temperature Sensitivity of 1.5µm Compressively Strained Semiconductor Lasers," IEEE J. Quantum Elecron. 29, 1565 (1993).

J. S. Osinski, P. Grodzinski, Y. Zou, and P. D. Dapkus, "Threshold current analysis of compressive strain (0-1.8%) in low threshold, long wavelength quantum well lasers," IEEE J. Quant. Electron. 29, 1576 (1993).

A. Mathur, J. S. Osinski, P. Grodzinski, and P. D. Dapkus, "Comparative study of low threshold strained and lattice matched quantum well lasers," Photon. Tech. Letters 5, 753 (1993).

H. Zhao, M. H. MacDougal, K. Uppal, P. D. Dapkus, "Sub-milliampere threshold InGaAs/GaAs/AlGaAs laser arrays on non planar substrates", IEEE Photon. Tech. Lett. 7, 593-595 (1995).

M.H. MacDougal, P.D. Dapkus, V. Pudikov, H. Zhao, G.M. Yang, "Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide/GaAs distributed Bragg reflectors," IEEE Photon. Tech. Lett. 7, 229-231 (1995).

G.M. Yang, M.H. MacDougal, P.D. Dapkus, "Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation," Electroni.Lett. 31, 886 (1995).

Atul Mathur and P. Daniel Dapkus, "Fabrication, Characterization and Analysis of Low Threshold Current Density 1.55 mm strained quantum well lasers," IEEE J. Quantum Electron.32, 222 (1995)

G. M. Yang, M. H. MacDougal, Vasilty Pudikov, and P. Daniel Dapkus, "Influence of mirror reflectivity on laser performance of very low threshold vertical cavity surface emitting lasers," Accepted for publication in IEEE Photonic Tech. Lett. 7, 1228 (1995).

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