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University of Southern California

 
Instruments
ESP SEM HDIC RGIC OFS I OFS II XUV FFES
 
Extreme Ultraviolet Photometer

This photodiode detector, the Extreme Ultraviolet Photodiode, has an aluminum film coating approximately 1500 Angstroms thick over the active area of the detector and is a phosphorus diffused (n on p) silicon photodiode. The photodiode wafer is fixed to a ceramic substrate and mounted to an aluminum mask. Near normal incidence solar photons enter an aperture stop that limits the field of view. A thin film filter is positioned directly behind the aperture, and its mount is slotted for atmospheric pumpout. A field stop mask with a circular cross section is placed directly in front of the coated wafer.
Both the filter and mask are electrically grounded to prevent signal drift. The EUV photons which are not filtered out (0.1 nm to 80 nm) are absorbed by the silicon crystal creating electron hole pairs that are separated by the built-in junction field to produce the resulting photocurrent.

 

 

 

 
    website last updated 5/31/2007